Modeling of the bipolar transistor under different pulse ionizing radiations

International Conference on Particle Physics and Astrophysics

物理学;天文学

Antonova, A.M.^1 ; Skorobogatov, P.K.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe highway 31, Moscow

115409, Russia^1

关键词: 2-D model;    Current response;    Energy depositions;    Finite-element discretization;    Semiconductor modules;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/798/1/012161/pdf
DOI  :  10.1088/1742-6596/798/1/012161

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

This paper describes a 2D model of the bipolar transistor 2T312 under gamma, X-ray and laser pulse ionizing radiations. Both the Finite Element Discretization and Semiconductor module of Comsol 5.1 are used. There is an analysis of energy deposition in this device under different radiations and the results of transient ionizing current response for some different conditions.