Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films

8th All-Russian Conference on Low Temperature Plasma in the Processes of Functional Coating Preparation

Kiseleva, D.V.^1 ; Yurjev, Y.N.^1 ; Petrakov, Y.V.^1 ; Sidelev, D.V.^1 ; Korzhenko, D.V.^1 ; Erofeev, E.V.^2

Department of Experimental Physics, National Research Tomsk Polytechnic University, Tomsk

634050, Russia^1

Tomsk State University of Control Systems and Radioelectronics, Tomsk

634034, Russia^2

关键词: Fourier transform infrared;    Magnetron power;    Optical characteristics;    Si-N bonds;    Silicon Nitride Film;    Silicon targets;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/789/1/012028/pdf
DOI  :  10.1088/1742-6596/789/1/012028

来源: IOP

【 摘 要 】

Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.41•1023- 3.48•1023cm-3. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2flow and properties of magnetron power supply.