Blistering of film from substrate after action of ultrashort laser pulse

31st International Conference on Equations of State for Matter

Inogamov, N.A.^1,2 ; Zhakhovsky, V.V.^1,2 ; Khokhlov, V.A.^1 ; Kuchmizhak, A.A.^3,4 ; Kudryashov, S.I.^5,6

Landau Institute for Theoretical Physics, Russian Academy of Scienses, Akademika Semenova 1a, Chernogolovka, Moscow Region

142432, Russia^1

Dukhov Research Institute of Automatics (VNIIA), Sushchevskaya 22, Moscow

127055, Russia^2

School of Natural Sciences, Far Eastern Federal University, Sukhanova 8, Primorsky Krai, Vladivostok

690041, Russia^3

Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Radio 5, Primorsky Krai, Vladivostok

690041, Russia^4

ITMO University, Kronvergskiy 49, Saint-Petersburg

197101, Russia^5

Lebedev Physical Institute, Russian Academy of Sciences, Leninsky Avenue 53, Moscow

119991, Russia^6

关键词: Diffraction limited;    Fluences;    Irradiated spots;    Optical lasers;    Physical model;    Small spots;    Thin metal films;    Three-dimensional deformations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/774/1/012102/pdf
DOI  :  10.1088/1742-6596/774/1/012102

来源: IOP

【 摘 要 】

The goal of the paper is to explain experimental results concerning film blistering. Tightly focused diffraction limited ultrashort optical laser pulse illuminates a small spot at a surface of a thin metal film mounted upon a dielectric or semiconductor support (substrate). Film mechanically separates from substrate and form a cupola like bump in a rather narrow range of absorbed fluences. Below this range deformations inside the spot are negligible. While above the range the hole remains in a film in the irradiated spot. The paper presents physical model starting from absorption and two-temperature state and including, first, description of conductive redistribution of absorbed heat, melting, hydrodynamics of strong three-dimensional deformations of a moving film, and, second, freezing of molten metal.