CMOS-compatible fabrication of metamaterial-based absorbers for the mid-IR spectral range

27th Micromechanics and Microsystems Europe Workshop

物理学;力学

Shahmarvandi, Ehsan Karimi^1 ; Ghaderi, Mohammadamir^1 ; Wolffenbuttel, Reinoud F.^1

Faculty EEMCS, Delft University of Technology, Mekelweg 4, CD Delft

2628, Netherlands^1

关键词: Absorber design;    CMOS Compatible;    Conventional materials;    Disk resonator;    Fabrication process;    IR spectral range;    Lift-off process;    Microspectrometers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/757/1/012033/pdf
DOI  :  10.1088/1742-6596/757/1/012033

学科分类：力学，机械学

来源: IOP

【 摘 要 】

A CMOS-compatible approach is presented for the fabrication of a wideband mid-IR metamaterial-based absorber on top of a Si3N4membrane, which contains poly-Si thermopiles. The application is in IR microspectrometers that are intended for implementation in portable microsystem for use in absorption spectroscopy. Although Au is the conventional material of choice, we demonstrate by simulation that near-perfect absorption can be achieved over a wider band when using the more CMOS-compatible Al. The absorber design is based on Al disk resonators and an Al backplane, which are separated by a SiO2layer. The fabrication process involves the deposition of Al and SiO2layers on top of a Si3N4membrane, lithography and a lift-off process for patterning of the top Al layer.