Comparative studies of monoclinic and orthorhombic WO3 films used for hydrogen sensor fabrication on SiC crystal

2nd Conference on Plasma & Laser Research and Technologies

Zuev, V.V.^1 ; Grigoriev, S.N.^2 ; Romanov, R.I.^1 ; Fominski, V.Y.^1 ; Volosova, M.A.^2 ; Demin, M.V.^3

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe sh. 31, Moscow

115409, Russia^1

Moscow State University of Technology STANKIN, Vadkovskii per. 3a, Moscow

127005, Russia^2

Immanuel Kant Baltic Federal University, Nevskogo 14 A, Kaliningrad

236041, Russia^3

关键词: Comparative studies;    Crystal packings;    Elevated temperature;    Hydrogen sensor;    Ion sputtering;    Reactive deposition;    Reactive pulsed laser deposition;    Structural characteristics;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/747/1/012050/pdf
DOI  :  10.1088/1742-6596/747/1/012050

来源: IOP

【 摘 要 】

Amorphous WOxfilms were prepared on the SiC crystal by using two different methods, namely, reactive pulsed laser deposition (RPLD) and reactive deposition by ion sputtering (RDIS). After deposition, the WOxfilms were annealed in an air. The RISD film possessed a m-WO3structure and consisted of closely packed microcrystals. Localized swelling of the films and micro-hills growth did not destroy dense crystal packing. RPLD film had layered β-WO3structure with relatively smooth surface. Smoothness of the films were destroyed by localized swelling and the micro-openings formation was observed. Comparative study of m-WO3/SiC, Pt/m-WO3/SiC, and P-WO3/SiC samples shows that structural characteristics of the WO3films strongly influence on the voltage/current response as well as on the rate of current growth during H2detection at elevated temperatures.