Formation of dielectric silicon compounds by reactive magnetron sputtering

2nd Conference on Plasma & Laser Research and Technologies

Veselov, D.S.^1 ; Voronov, Yu A.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, 31 Kashirskoe highway, Moscow

115409, Russia^1

关键词: Accumulated charge;    Mid-frequencies;    Negative polarity;    Positive polarity;    Reactive magnetron sputtering;    Rectangular pulse;    Silicon targets;    Special devices;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/747/1/012022/pdf
DOI  :  10.1088/1742-6596/747/1/012022

来源: IOP

【 摘 要 】

The paper is devoted to the study of reactive magnetron sputtering of the silicon target in the ambient of inert argon gas with reactive gas, nitrogen or oxygen. The magnetron was powered by two mid-frequency generators of a rectangular pulse of opposite polarity. The negative polarity pulse provides the sputtering of the target. The positive polarity pulse provides removal of accumulated charge from the surface of the target. This method does not require any special devices of resistances matching and provides continuous sputtering of the target.