Interactions between graphene oxide and wide band gap semiconductors

7th European Thermal-Sciences Conference

Kawa, M.^1,2 ; Podborska, A.^3 ; Szacilowski, K.^2

Faculty of Energy and Fuels, AGH University of Science and Technology, Ave. Mickiewicza 30, Krakow

30-059, Poland^1

Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Ave. Mickiewicza 30, Krakow

30-059, Poland^2

Faculty of Non-Ferrous Metals, AGH University of Science and Technology, Ave. Mickiewicza 30, Krakow

30-059, Poland^3

关键词: Carbonaceous materials;    Charge transfer process;    Hummers method;    Interlayer spacings;    Oxygen-containing functional groups;    Quinone structures;    Titanium atoms;    UV-Vis absorption spectroscopy;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/745/3/032102/pdf
DOI  :  10.1088/1742-6596/745/3/032102

来源: IOP

【 摘 要 】

The graphene oxide (GO) and GO@TiO2nanocomposite have been synthesised by using modified Hummers method and ultrasonics respectively. The materials were characterized by using X-ray diffraction, Fourier transform infrared spectroscopy and UV-Vis absorption spectroscopy. It was found that the interaction between GO and TiO2affects the average interlayer spacing in carbonaceous material. The formation of bonds between various oxygen-containing functional groups and surface of titanium dioxide was investigated. One of them formed between the quinone structures (occur in graphene oxide) and titanium atoms exhibited 1.5 bond order. Furthermore the charge-transfer processes in GO@TiO2composite were observed.