Temperature dependence of silicon carbide drift step recovery diodes injection electroluminescence

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Afanasyev, A.V.^1 ; Ivanov, B.V.^1 ; Ilyin, V.A.^1 ; Luchinin, V.V.^1 ; Serguschichev, K.A.^1 ; Smirnov, A.A.^1 ; Kardo-Sysoev, A.F.^2

Center of Diagnosis and Microtechnology, Saint Petersburg Electrotechnical University LETI, Saint Petersburg

197376, Russia^1

Ioffe Institute RAS, Saint Petersburg

194021, Russia^2

关键词: Calibration curves;    Drift step-recovery diodes;    Electroluminescence spectra;    High voltage pulse;    Injection electroluminescence;    Non contact temperatures;    Silicon carbides (SiC);    Temperature dependence;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012175/pdf
DOI  :  10.1088/1742-6596/741/1/012175

来源: IOP

【 摘 要 】

The experimental results of silicon carbide (SiC) drift step recovery diodes (DSRDs) temperature dependence of injection electroluminescence (IEL) spectra were presented. It was shown that in the forward current range If= 0,11 A the DSRD-dies temperature was raised from 327 K to 546 K correspondingly. While the short-wavelength maximum of IEL spectra - λmax1shifts from 392.4 to 402.1 nm and possesses dependence close to linear. On the basis of obtained calibration curves it is possible the non-contact temperature measuring of SiC-DSRDs by electroluminescence spectra at their operation in the generator of high voltage pulses.