Impact of nanomaterial arrangement on the reliability and the electron mobility in AlGaN/GaN HEMTs

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Vidyakin, S.I.^1 ; Gudkov, A.G.^1 ; Oganesyan, G.A.^2 ; Petrov, V.N.^2 ; Sakharov, A.V.^2 ; Shabunina, E.I.^2 ; Zybin, A.A.^3 ; Parnes, Ya M.^3

Bauman Moscow State Technical University, Moscow

105005, Russia^1

Ioffe Institute, St. Petersburg

194021, Russia^2

JSC Svetlana-Electronpribor, St. Petersburg

194156, Russia^3

关键词: AlGaN/GaN HEMTs;    Degree of disorder;    Multifractal parameters;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012172/pdf
DOI  :  10.1088/1742-6596/741/1/012172

来源: IOP

【 摘 要 】

The obtained results demonstrate that the improvement of nanomaterial arrangement in AlGaN/GaN HEMT structures quantitatively characterized with the use of a multifractal parameter (the degree of disorder) results in the increase at several times in the electron mobility values at 2DEG channel in HEMT structures and the reliability of HEMT parameters.