3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016) | |
Influence of AlN/GaN superlattice period on frequency of polar optical modes | |
Pankin, D.V.^1,2 ; Smirnov, M.B.^1 | |
Physical Faculty, St.Petersburg State University, St. Petersburg | |
199034, Russia^1 | |
Resource Center for Optical and Laser Materials Research, St. Petersburg State University, St. Petersburg, St. Petersburg | |
199034, Russia^2 | |
关键词: Dielectric continuum model; Frequency structure; Interface planes; Layer thickness ratio; Physical meanings; Polar optical phonons; Strong coupling; Superlattice periods; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012123/pdf DOI : 10.1088/1742-6596/741/1/012123 |
|
来源: IOP | |
【 摘 要 】
Polar optical phonons in the binary AlN/GaN superlattices (SL) were studied in the framework of dielectric continuum model (DCM). It is shown that the modes propagating in the interface plane are delocalized over all layers and the modes propagating along the SL axis are delocalized in certain layers. Frequencies of former strongly depend on the layer thickness ratio and frequencies of the latter do not depend on the SL structure. Such behavior is typical for the short-period SL. We show that a strong coupling between two types of the modes takes place at increasing SL period. The phenomenon is described mathematically by the frequency- structure relations and its physical meaning is discussed.
【 预 览 】
Files | Size | Format | View |
---|---|---|---|
Influence of AlN/GaN superlattice period on frequency of polar optical modes | 1240KB | download |