1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Zubov, F.I.^1,2 ; Gladii, S.P.^2 ; Shernyakov, Yu M.^1,3 ; Maximov, M.V.^1,2,3 ; Semenova, E.S.^4 ; Kulkova, I.V.^5,6 ; Yvind, K.^4 ; Zhukov, A.E.^1,2

St Petersburg Academic University, St Petersburg

194021, Russia^1

Peter the Great St.Petersburg Polytechnic University, St Petersburg

195251, Russia^2

Ioffe Institute, St Petersburg

194021, Russia^3

DTU Fotonik, Technical University of Denmark, Kgs. Lyngby

DK-2800, Denmark^4

IMEC, Kapeldreef 75, Leuven

BE-3001, Belgium^5

KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200d, Leuven

BE-3001, Belgium^6

关键词: High temperature stability;    Lasing wavelength;    Temperature characteristic;    Temperature range;    Temperature stability;    Threshold currents;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012109/pdf
DOI  :  10.1088/1742-6596/741/1/012109

来源: IOP

【 摘 要 】

Temperature characteristics of InAs/InGaAsP quantum dot (QD) lasers synthesized on InP (001) substrate are presented. The lasers demonstrate high temperature stability: a threshold current characteristic temperature as high as 205 K in the temperature range between 20 to 50°C was measured. Lasing wavelength of 1.5 μm was achieved by covering QDs with 1.7 monolayers of GaAs.