Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Shuleiko, D.V.^1 ; Ilin, A.S.^1,2

Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, Moscow

119991, Russia^1

National Research Centre Kurchatov Institute, 1 Kurchatov Sq., Moscow

123182, Russia^2

关键词: Conductivity changes;    Electrical measurement;    Photoluminescence peak;    Quantum confinement effects;    Resistive switching;    Silicon nanocrystals;    Silicon rich silicon oxides;    Silicon-rich silicon nitrides;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012082/pdf
DOI  :  10.1088/1742-6596/741/1/012082

来源: IOP

【 摘 要 】

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa93/Si3N4and SiN0.8/Si3N4layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals.