Model of mode-locked quantum-well semiconductor laser based on InGaAs/InGaAlAs/InP heterostructure

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Rybalko, D.A.^1 ; Polukhin, I.S.^1 ; Solov'Ev, Y.V.^1 ; Mikhailovskiy, G.A.^1 ; Odnoblyudov, M.A.^1 ; Gubenko, A.E.^1 ; Livshits, D.A.^1 ; Firsov, A.N.^1 ; Kirsyaev, A.N.^1 ; Efremov, A.A.^1 ; Bougrov, V.E.^2

Peter the Great St. Petersburg Polytechnic University, Saint Petersburg

195251, Russia^1

ITMO University, Saint Petersburg

197101, Russia^2

关键词: Amplifying section;    Laser structures;    Mode-locked;    Quantum-well semiconductor lasers;    Reverse biased saturable absorbers;    Traveling wave model;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012079/pdf
DOI  :  10.1088/1742-6596/741/1/012079

来源: IOP

【 摘 要 】

We propose a model for operation of mode-locked (ML) quantum-well semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model. Numerical simulations performed for the InGaAs/InGaAlAs laser structure emitting at 1,55 um.