Modeling of crystal growth in heteroepitaxial systems

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Moroz, O.I.^1 ; Makarets, M.V.^1

Department of Physics, Taras Shevchenko National University of Kyiv, Kyiv

01601, Ukraine^1

关键词: Atomic planes;    Base of the pyramids;    Heteroepitaxial systems;    Lattice periods;    Mechanical stress;    Structural defect;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012046/pdf
DOI  :  10.1088/1742-6596/741/1/012046

来源: IOP

【 摘 要 】

This paper investigates the elastic deformation of the structure containing InAs nanoclusters in a pyramid, grown on the substrate GaAs. So far the data have not been grown quantum dots (QDs), one of the reasons is significant difference of periods, which reaches 7%. Ideally atomic plane on the border of QDs and substrate must continuously sews. Due to the difference in lattice periods crosslinking occurring deformations and mechanical stresses, the magnitude of which is proportional to the number of atomic planes, the size of base of the pyramid. Therefore, when you reach a certain size islands (quantum dots), they may experience mechanical stresses pcrsufficient for the appearance of structural defects - dislocations, fractures.