Synthesis of GaN nanowires on Si (111) substrates by molecular beam epitaxy

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Bolshakov, A.D.^1 ; Sapunov, G.A.^1 ; Mozharov, A.M.^1 ; Cirlin, G.E.^1,2,3,4 ; Shtrom, I.V.^1,3 ; Mukhin, I.S.^1,5

St.Petersburg Academic University, St. Petersburg

194021, Russia^1

Institute for Analytical Instrumentation RAS, St. Petersburg

190103, Russia^2

St. Petersburg State University, St. Petersburg

199034, Russia^3

St. Petersburg State Polytechnical University, St. Petersburg

195251, Russia^4

ITMO University, St. Petersburg

197101, Russia^5

关键词: Ga flux;    GaN nanowires;    Oxide removal;    Si(111) substrate;    Substrate temperature;    Surface density;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012044/pdf
DOI  :  10.1088/1742-6596/741/1/012044

来源: IOP

【 摘 要 】

In this work we study growth of semiconductor GaN nanowires (NWs) on Si(111) substrates by means of molecular beam epitaxy. We demonstrate that the substrate temperature affects both the surface density and growth rate of the synthesized NWs. It was determined that at a fixed flux of nitrogen equal to 1.3 cm3/min the maximum growth rate of NWs is ∼ 38 nm/h at a substrate temperature - 800oC. It was also found that the growth rate of NWs on the substrates treated with the oxide removal procedure is half the growth rate on substrates covered with oxide, while their surface density is twice higher in the first case. In addition we have studied influence of Ga flux on NWs formation.