会议论文详细信息
3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)
Application of slope-intercept diagram to determine the parameters of the nanocomposite field emitters in-situ
Smirnov, I.U.^1,2 ; Kolosko, A.G.^1,2 ; Filippov, S.V.^1,3 ; Yudkina, N.A.^1,3 ; Popov, E.O.^1,3
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, ul. Polytechnitscheskaya 26, St.-Petersburg
194021, Russia^1
Bonch-Bruevich St.-Petersburg State University of Telecommunications, pr. Bolshevikov 22, St.-Petersburg
193232, Russia^2
Peter the Great St.-Petersburg Polytechnical University, ul. Polytechnitscheskaya 29, St.-Petersburg
195251, Russia^3
关键词: Diagram analysis;    Emission area;    Emission parameters;    Field emitter;    Field enhancement factor;    Online processing;    Sample structure;   
Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012031/pdf
DOI  :  10.1088/1742-6596/741/1/012031
来源: IOP
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【 摘 要 】

The method of the field emission data online processing of materials, perspective for a nanoelectronics, is developed. The method is based on the slope-intercept diagram analysis of the current voltage characteristics registered during the experiment. It allows to build calibration grids of the microscopic emission parameters, such as work function, effective emission area and field enhancement factor, and and to estimate changes in the sample structure online.

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