The temperature dependence of the electrical conductivity in Cu2O thin films grown by magnetron sputtering

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Kudryashov, D.^1 ; Gudovskikh, A.^1,2 ; Zelentsov, K.^1 ; Mozharov, A.^1 ; Babichev, A.^3,4,5 ; Filimonov, A.^4

Renewable Energy Lab, St. Petersburg Academic University, St. Petersburg

194021, Russia^1

St. Petersburg Electrotechnical University LETT, St. Petersburg

197376, Russia^2

ITMO University, St. Petersburg

197101, Russia^3

Connector Optics LLC, St. Petersburg

194292, Russia^4

Ioffe Institute, St. Petersburg

194021, Russia^5

关键词: Electrical conductivity;    Gap state;    Rf-power;    Sputtering power;    Temperature dependence;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012013/pdf
DOI  :  10.1088/1742-6596/741/1/012013

来源: IOP

【 摘 要 】

The temperature dependence of the electrical conductivity in Cu2O thin films grown by magnetron sputtering at room temperature under different rf-power was investigated. Calculated activation energy of the conductivity for copper oxide (I) films linearly increases with increase in sputtering power reflecting an increasing in concentration of gap states.