会议论文详细信息
3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016) | |
The thickness dependence of dielectric permittivity in thin films | |
Starkov, Ivan A.^1 ; Starkov, Alexander S.^2 | |
Nanotechnology Center, St. Petersburg Academic University, RAS, Khlopin st. 8/3, St. Petersburg | |
194021, Russia^1 | |
National Research University of Information Technologies, Mechanics and Optics, Kronverksky pr. 49, St. Petersburg | |
197101, Russia^2 | |
关键词: Bulk materials; Classical model; Dielectric permittivities; Effective permittivity; Film interfaces; Half spaces; Physical parameters; Thickness dependence; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012004/pdf DOI : 10.1088/1742-6596/741/1/012004 |
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来源: IOP | |
【 摘 要 】
It is well known that the physical properties of thin films depend on their thickness. For a description of such dependences, it is proposed to use a classical model taking into account the presence of film interfaces. A dielectric ball near the half-space was chosen to adopt the approach. The dependence of the effective permittivity of the ball on geometrical and physical parameters of the system is analyzed. It is demonstrated that the dielectric constant of a film can be presented as a sum of the constant of a bulk material and the interface term.
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