Simulation of 2D Brain's Potential Distribution Based on Two Electrodes ECVT Using Finite Element Method

6th Asian Physics Symposium

Sirait, S.H.^1 ; Edison, R.E.^2 ; Baidillah, M.R.^2 ; Taruno, W.P.^2 ; Haryanto, F.^1

Nuclear Physics and Biophysics Division, Physics Department Institut Teknologi, Bandung, Indonesia^1

CTECH Labs Edwar Technology, Tangerang, Indonesia^2

关键词: Action potentials;    Capacitance electrodes;    Dielectric distribution;    Electrical Capacitance Tomography;    Governing equations;    Potential distributions;    Potential values;    Time-dependent potentials;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/739/1/012126/pdf
DOI  :  10.1088/1742-6596/739/1/012126

来源: IOP

【 摘 要 】

The aim of this study is to simulate the potential distribution of 2D brain geometry based on two electrodes ECVT. ECVT (electrical capacitance tomography) is a tomography modality which produces dielectric distribution image of a subject from several capacitance electrodes measurements. This study begins by producing the geometry of 2D brain based on MRI image and then setting the boundary conditions on the boundaries of the geometry. The values of boundary conditions follow the potential values used in two electrodes brain ECVT, and for this reason the first boundary is set to 20 volt and 2.5 MHz signal and another boundary is set to ground. Poisson equation is implemented as the governing equation in the 2D brain geometry and finite element method is used to solve the equation. Simulated Hodgkin-Huxley action potential is applied as disturbance potential in the geometry. We divide this study into two which comprises simulation without disturbance potential and simulation with disturbance potential. From this study, each of time dependent potential distributions from non-disturbance and disturbance potential of the 2D brain geometry has been generated.