Application of ultrashort laser pulses for timing characterization of silicon photomultipliers

5th International Conference of Photonics and Information Optics

Popova, E.V.^1 ; Buzhan, P Zh^1 ; Stifutkin, A.A.^1 ; Ilyin, A.L.^1 ; Mavritskii, O.B.^1 ; Egorov, A.N.^1 ; Nastulyavichius, A.A.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, 31 Kashirskoe shosse, Moscow

115409, Russia^1

关键词: Discharge process;    Silicon photomultiplier;    Single cells;    Spot sizes;    Sub-picosecond;    Timing characterization;    Timing resolutions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/737/1/012041/pdf
DOI  :  10.1088/1742-6596/737/1/012041

来源: IOP

【 摘 要 】

The application of femtosecond laser irradiation for the investigation of Geiger discharge process in silicon photomultiplier (SiPM) is discussed. It is shown experimentally that sub-picosecond pulses of laser beam focused to micron spot sizes allow studying the dynamics of Geiger discharge process in single cell of silicon photomultiplier. These studies are aimed at identifying the factors limiting the timing resolution of this class of devices.