Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation

11th International Symposium on Radiation from Relativistic Electrons in Periodic Structures

Takabayashi, Y.^1 ; Bagrov, V.G.^2,3 ; Bogdanov, O.V.^2,4 ; Pivovarov, Yu.L.^5 ; Tukhfatullin, T.A.^4

SAGA Light Source, 8-7 Yayoigaoka, Tosu, Saga

841-0005, Japan^1

National Research Tomsk State University, 36 Lenin Avenue, Tomsk

634050, Russia^2

Institute of High Current Electronics, SB RAS, 2/3Academychesky Avenue, Tomsk

634055, Russia^3

National Research Tomsk Polytechnic University, 30 Lenin Avenue, Tomsk

634050, Russia^4

V.E. Zuev Institute of Atmospheric Optics SB RAS, 1 Zuev Square, Tomsk

634034, Russia^5

关键词: Electron trajectories;    Half-wave;    MeV-Electrons;    Planar channeling;    Relativistic electron;    Silicon crystal;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/732/1/012036/pdf
DOI  :  10.1088/1742-6596/732/1/012036

来源: IOP

【 摘 要 】

New experimental data on planar channeling of 255 MeV electrons in a 0.74 μm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.