Dynamic Simulation of Backward Diffusion Based on Random Walk Theory

3rd International Workshop on Theoretical and Computational Physics: Complex Systems and Interdisciplinary Physics;40th National Conference on Theoretical Physics

物理学;计算机科学

Dung, Vu Ba^1 ; Nguyen, Bui Huu^1

Hanoi University of Mining and Geology, Duc Thang, Bac Tu Liem, Hanoi, Viet Nam^1

关键词: Diffusion based;    Diffusion process;    Diffusion studies;    Fundamental laws;    Low concentrations;    Random-walk theory;    Self-interstitial;    Thermal velocity;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/726/1/012021/pdf
DOI  :  10.1088/1742-6596/726/1/012021

学科分类：计算机科学（综合）

来源: IOP

【 摘 要 】

Results of diffusion study in silicon showed that diffusion of the selfinterstitial and vacancy could be backward diffusion and their diffusivity could be negative [1]. The backward diffusion process and negative diffusivity is contrary to the fundamental laws of diffusion such as the law of Fick law, namely the diffusive flux of backward diffusion goes from regions of low concentration to regions of high concentration. The backward diffusion process have been explained [2]. In this paper, the backward diffusion process is simulated. Results is corresponding to theory and show that when thermal velocity of the low concentration area is greater than thermal velocity of the high concentration area, the backward diffusion can be occurred.