Chemical state of Ag in Conducting Bridge Random Access Memory cells: a depth resolved X-ray Absorption Spectroscopy investigation.

16th International Conference on X-ray Absorption Fine Structure

D'Acapito, F.^1 ; Souchier, E.^2 ; Noe, P.^2 ; Blaise, P.^2 ; Bernard, M.^2 ; Jousseaume, V.^2

CNR-IOM-OGG C/o ESRF, LISA CRG, 71 Avenue des Martyrs, Grenoble, France^1

Univ. Grenoble Alpes, CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, Grenoble, France^2

关键词: Active electrodes;    Chemical state;    Depth-resolved;    Flash technology;    Low resistance;    Massive deployment;    Metallic state;    Random access memory;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/712/1/012046/pdf
DOI  :  10.1088/1742-6596/712/1/012046

来源: IOP

【 摘 要 】

Conducting Bridge Random Access Memories (CBRAM) are a promising substitute for FLASH technology but problems with limited retention of the low resistance ON state still hamper their massive deployment. Depth resolved X-ray Absorption Spectroscopy has been used to describe the chemical state of the atoms of the active electrode (in this case Ag) and to reveal the role of Sb as stabilizer of the metallic state.