Effects of ageing on the electrical characteristics of Zn/ZnS/n-GaAs/In structure

International Physics Conference at the Anatolian Peak 2016

Güzeldir, B.^1 ; Salam, M.^1

Atatürk University, Erzurum

25240, Turkey^1

关键词: Barrier heights;    Characteristics parameters;    Current voltage;    Electrical characteristic;    I-V measurements;    Ideality factors;    Series resistances;    Successive ionic layer adsorption and reactions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/707/1/012016/pdf
DOI  :  10.1088/1742-6596/707/1/012016

来源: IOP

【 摘 要 】

Zn/ZnS/n-GaAs/In structure has been fabricated by the Successive Ionic Layer Adsorption and Reaction (SILAR) method and the influence of the time dependent or ageing on the characteristic parameters are examined. The current-voltage (I-V) of the structure have been measured immediately, 1, 3, 5, 15, 30, 45, 60, 75, 90, 105, 120, 135, 150 and 165 days after fabrication of this structure. The characteristics parameters of this structure such as barrier height, ideality factor, series resistance are calculated from the I-V measurements. It has been seen that the changes of characteristic parameters such as barrier height, ideality factor and series resistance of Zn/ZnS/n-GaAs/In structure have lightly changed with increasing ageing time.