High Performance, Low Operating Voltage n-Type Organic Field Effect Transistor Based on Inorganic-Organic Bilayer Dielectric System

India-Japan Expert Group Meeting on Biomolecular Electronics & Organic Nanotechnology for Environment Preservation

物理学;生物科学;生态环境科学

Dey, A.^1 ; Singh, A.^1 ; Kalita, A.^1 ; Das, D.^1 ; Iyer, P.K.^1,2

Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam

781039, India^1

Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati, Assam

781039, India^2

关键词: Aluminum electrodes;    Conjugated molecules;    Device configurations;    Diverse applications;    Low operating voltage;    Low threshold voltage;    Poly (vinyl alcohol) (PVA);    Single layer devices;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/704/1/012017/pdf
DOI  :  10.1088/1742-6596/704/1/012017

来源: IOP

【 摘 要 】

The performance of organic field-effect transistors (OFETs) fabricated utilizing vacuum deposited n-type conjugated molecule N,N'-Dioctadecyl-1,4,5,8-naphthalenetetracarboxylic diimide (NDIOD2) were investigated using single and bilayer dielectric system over a low-cost glass substrate. Single layer device structure consists of Poly (vinyl alcohol) (PVA) as the dielectric material whereas the bilayer systems contain two different device configuration namely aluminum oxide/Poly (vinyl alcohol) (Al2O3/PVA) and aluminum oxide/Poly (methyl mefhacrylate) (Al2O3/PMMA) in order to reduce the operating voltage and improve the device performance. It was observed that the devices with Al2O3/PMMA bilayer dielectric system and top contact aluminum electrodes exhibit excellent n-channel behaviour under vacuum compared to the other two structures with electron mobility value of 0.32 cm2/Vs, threshold voltages ∼1.8 V and current on/off ratio ∼104, operating under a very low voltage (6 V). These devices demonstrate highly stable electrical behaviour under multiple scans and low threshold voltage instability in vacuum condition even after 7 days than the Al2O3/PVA device structure. This low operating voltage, high performance OTFT device with bilayer dielectric system is expected to have diverse applications in the next generation of OTFT technologies.