Electron transport in Al-doped ZnO nanolayers obtained by atomic layer deposition

19th International Summer School on Vacuum, Electron and Ion Technologies

Blagoev, B.S.^1 ; Dimitrov, D.Z.^1 ; Mehandzhiev, V.B.^1 ; Kovacheva, D.^2 ; Terziyska, P.^1 ; Pavlic, J.^1 ; Lovchinov, K.^3 ; Mateev, E.^4 ; Leclercq, J.^1 ; Sveshtarov, P.^1

Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, Sofia

1784, Bulgaria^1

Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 10, Sofia

1113, Bulgaria^2

Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, Sofia

1784, Bulgaria^3

Emil Djakov Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, Sofia

1784, Bulgaria^4

关键词: Al doped ZnO thin films;    Amorphous structures;    Diethyl zinc;    Dopant concentrations;    Electron transport;    Inhomogeneities;    Oriented polycrystalline;    ZnO:Al films;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/700/1/012040/pdf
DOI  :  10.1088/1742-6596/700/1/012040

来源: IOP

【 摘 要 】

Al-doped ZnO thin films with different Al content were prepared by atomic layer deposition (ALD). To carry out thermal ALD, diethyl zinc (DEZ) and tri-methyl aluminium (TMA) were used as Zn and Al precursors, respectively, and water vapor as oxidant. Various numbers n of DEZ and m TMA cycles was used to obtain different [ZnO]n[Al2O3]mfilms, where n = 100 - 95, m = 1 - 5. The X-ray diffraction analysis showed a predominantly (100) oriented polycrystalline phase for the ZnO:Al films with a low Al content (m = 1 - 3) and an amorphous structure for pure Al2O3. In ZnO:Al with a higher Al content (m = 4 - 6) the (100) reflection disappeared and the (002) peak increased. The resistivity of the films decreased with the increase in the Al content, reaching a minimum of 3.3×10-3Ω cm at about 1.1 % Al2O3for the [ZnO]99[Al2O3]2sample; for higher dopant concentrations, the resistivity increased because of the increased crystal inhomogeneity due to axis reorientation.