Self-catalyzed GaAs and InAs nanowire growth (Monte Carlo simulation)

17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Suprunets, A.G.^1,2 ; Vasilenko, M.A.^1,2 ; Shwartz, N.L.^1,2

Rzhanov Institute of Semiconductor Physics, Novosibirsk

630090, Russia^1

Novosibirsk State Technical University, Novosibirsk

630073, Russia^2

关键词: Energy parameters;    Inas nanowires;    Lattice Monte Carlo;    Monte Carlo model;    Nanowire growth;    Self-catalyzed;    Vapor-liquid-solid mechanism;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/690/1/012011/pdf
DOI  :  10.1088/1742-6596/690/1/012011

来源: IOP

【 摘 要 】

A new lattice Monte Carlo model of AIIIBVnanowire growth according to the vapor- liquid-solid mechanism is suggested. The peculiarities of this model and the procedure of energy parameters estimation for the InAs system are described. The characteristics of InAs and GaAs self-catalyzed nanowire growth are obtained using the suggested model. A comparison of InAs and GaAs self-catalyzed nanowire growth characteristics using the suggested Monte Carlo model is performed.