Electrochemical preparation and structural characterization of CuGaSe2 thin films

3rd International Meeting for Researchers in Materials and Plasma Technology; 1st Symposium on Nanoscience and Nanotechnology

物理学;材料科学

Manfredy, L.^1 ; Marquez, O.P.^1 ; Lopez-Rivera, S.A.^1 ; Marquez, J.^1 ; Martínez, Y.^1 ; Miranda, D.A.^2

Universidad de Los Andes, Mérida, Venezuela^1

Universidad Industrial de Santander, Bucaramanga, Colombia^2

关键词: Deposition potential;    Electrochemical behaviour;    Electrochemical preparation;    Morphology analysis;    One-step electrodepositions;    Optimum conditions;    Standard calomel electrodes;    Structural characterization;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/687/1/012038/pdf
DOI  :  10.1088/1742-6596/687/1/012038

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

CuGaSe2thin films have been synthesized by one-step electrodeposition on titanium and SnO2/glass substrates from aqueous solutions that contain thiocyanate ion as a complexing agent. According to composition, and morphology analysis at deposition potential of -0.55V vs SCE (Standard Calomel Electrode) for 20 minutes from aqueous solutions of 4.6mM CuCl, 25.0mM GaCl3y 9.2mM SeO2in 2.0M de KSCN at pH 2.5 was found the optimum condition for obtain the CuGaSe2thin films with good morphology and good stoichiometric. The samples were annealed at temperature of 520°C in inert atmosphere for 30 minutes to improve their crystallinity. The obtained CuGaSe2thin film has a direct band gap (Eg) of 1.65eV. In addition, the cyclic voltammetry (CV) studies were performed in order to elucidate the electrodic processes that occur for the formation of semiconductor CuGaSe2. Therefore, the electrochemical behaviour for each ion (Cu+, Ga3+and Se4+), for binary (Cu-Se, Ga-Se, and Cu- Ga) and for ternary (Cu-Ga-Se) systems are described. This material has potential application in solar cells.