Monte Carlo simulation of V/III flux ratio influence on GaAs island nucleation during MBE

International Conference on Computer Simulation in Physics and Beyond 2015

物理学;计算机科学

Ageev, O.A.^1 ; Solodovnik, M.S.^1 ; Balakirev, S.V.^1 ; Mikhaylin, I.A.^1

Department of Nanotechnologies and Microsystems, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 2 Shevchenko Street, Taganrog

347928, Russia^1

关键词: Gallium atoms;    Island density;    Island formation;    Island nucleation;    Island size distribution;    Kinetic monte carlo simulation;    Molecular beam epitaxial growth;    Surface coverages;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/681/1/012036/pdf
DOI  :  10.1088/1742-6596/681/1/012036

学科分类：计算机科学（综合）

来源: IOP

【 摘 要 】

The kinetic Monte Carlo simulation of GaAs/GaAs(001) molecular beam epitaxial growth considering V/III flux ratio influence on nucleating island characteristics is presented. It is shown that the island density increases with the surface coverage increase and reaches saturation after deposition of ∼0.1 monolayer of GaAs. The increase of V/III flux ratio from 3 to 40 leads to the increase of the island density from 1.9-1012to 2.6-1012cm-2. At the same time the average size decreases from 4.4 to 4.1 nm. The island size distribution function narrows with V/III flux ratio increase. This is attributed to the shortage of gallium atoms in comparison with deposited arsenic molecules that prevents large island formation and leads to the dramatic growth of little island concentration. The simulation demonstrates good agreement with experimental results.