Failure Analysis and Quality Control of Microwave Devices

8th International Conference on Advanced Infocomm Technology

Ming, Zhimao^1 ; Zong, Bo^1 ; Bai, Xiaoshu^1

China Satellite Maritime Tracking and Control Department, Jiangsu

214431, China^1

关键词: Electrode systems;    Ionic contamination;    Metallization systems;    Radiation ionizations;    Reliability level;    Silicon dioxide layers;    Statistical datas;    Thermal breakdown;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/679/1/012038/pdf
DOI  :  10.1088/1742-6596/679/1/012038

来源: IOP

【 摘 要 】

Microwave devices have been widely used in the communication and navigation and navigation fields. The reliability level of microwave devices is an important factor to affect the reliability of electronic equipment. The statistical analysis for the failure of sixty microwave devices was presented and the main causes of failure were given. The failure is mainly analyzed from three aspects below, the surface failure mechanism, the interior failure mechanism and the failure mechanism of electrode system and encapsulation. The surface failure mechanism is analyzed from four aspects, ionic contamination on the surface, silicon dioxide layer defect, the influence of interface states between silicon and silicon dioxide, radiation ionization trap. The interior failure mechanism is analyzed from two aspects, failure caused by thermal breakdown and failure due to latch-up effect of integrated circuit. The failure mechanism of electrode system and encapsulation is analyzed from two aspects, failure mechanism of metallization system and failure mechanism of metallization system of bonding. Meanwhile, the results showed that operation, process, adjustment, components and using problems were the main causes of failure. The valuable statistical data and analysis results were provided for the quality control of microwave devices.