Simulation of surface radiation defects leakage current SiPM using Synopsys TCAD

International Conference on Particle Physics and Astrophysics

Parygin, P.P.^1 ; Popova, E.V.^1 ; Grachev, V.M.^1

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe highway 31, Moscow

1125409, Russia^1

关键词: Professional software;    Silicon photomultiplier;    Simulation data;    Surface radiation;    Synopsys;    Technological process;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/675/4/042046/pdf
DOI  :  10.1088/1742-6596/675/4/042046

来源: IOP

【 摘 要 】

Synopsys TCAD is a professional software for the development of the semiconductor technological process and device simulaion. In order to study a radiation damage of the surface of silicon photomultipliers (SiPMs) the simulation of these devices using Synopsys TCAD has been made. Experimental samples were produced by KETEK GmbH and have been irradiated with the different doses of X-rays with an energy of E≈12 keV. The current-voltage characteristics below breakdown measured before and after irradiations have been simulated with TCAD. Obtained curves for experimental and simulation data are presented.