Thermal annealing of C ion irradiation defects in nuclear graphite studied by positron annihilation

The International Workshop on Positron Studies of Defects 2014

Shi, C.Q.^1 ; Schut, H.^2 ; Li, Z.C.^1,3

State Key Lab of New Ceramic and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China^1

Department of Radiation Science and Technology, Delft University of Technology, Mekelweg 15, Delft

2629 JB, Netherlands^2

Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China^3

关键词: High-dose implantation;    Irradiation defect;    Nuclear graphite;    Positron beams;    Radiation-induced;    Thermal behaviours;    Thermal-annealing;    Vacancy complexes;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/674/1/012019/pdf
DOI  :  10.1088/1742-6596/674/1/012019

来源: IOP

【 摘 要 】

In order to investigate the thermal behaviour of radiation induced point defects in nuclear graphite, ETU10 graphite was implanted with 350 keV C+ion to doses of 1015and 1016cm-2. The point defects introduced by the implantation were characterized by Positron Annihilation Doppler Broadening (PADB) and their thermal behaviour was studied during "in situ" annealing at Delft Variable Energy Positron beam (VEP). The annealing was performed for 5 minutes at temperatures ranging from 300 K (as implanted) to 1500 K in steps of 100 K. For both doses, an annealing stage at around 450 K is observed followed by a second stage around 700 K. For the high dose implantation vacancy complexes are found which are stable up to a temperature around 1400K.