Local analysis of porous silicon structure fabricated by nontraditional approach

17th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Vorobev, V.^1 ; Osin, Y.^1 ; Ermakov, M.^2,3 ; Nuzhdin, V.^2 ; Valeev, V.^2 ; Tayurskii, D.^1 ; Stepanov, A.^1,2

Kazan Federal University, Kazan, Russia^1

Kazan Physical-Technical Institute of RAS, Kazan, Russia^2

Pacific National University, Khabarovsk, Russia^3

关键词: c-Si substrates;    Crystalline substrates;    Electron backscattering diffraction;    Monocrystalline;    Non-traditional approach;    Porous silicon structures;    Semiconductor layers;    Thermal-annealing;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/661/1/012036/pdf
DOI  :  10.1088/1742-6596/661/1/012036

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

A comparison of experimental electron backscattering diffraction patterns for porous Si formed by ion implantation and thermal annealing is presented. For this purposes Ag-ion implantation into monocrystalline c-Si substrates at energy of 30 keV with dose of 1.5×1017ion/cm2was carried out. Surface nanoporous Si structures were studied by scanning electron microscope imaging and electron backscattering diffraction. Amorphization of Si after implantation and recrystallization of porous Si after annealing is observed. Ion implantation is suggested to be effective technique for a formation of nanoporous semiconductor layers, which could be easily combined with the crystalline substrate matrix for various applications.