Process for integration of energetic porous silicon devices

15th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications

物理学;能源学

Ervin, Matthew H.^1 ; Isaacson, Brian^1 ; Levine, Louis B.^1

US Army Research Laboratory, 2800 Powder Mill Road, Adelphi

MD

20783, United States^1

关键词: Dielectric layer;    Electrode process;    Etch process;    MEMS actuation;    Proof of concept;    Proximity effects;    Quantitative modeling;    Silicon devices;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/660/1/012067/pdf
DOI  :  10.1088/1742-6596/660/1/012067

来源: IOP

【 摘 要 】

We have developed new procedures for etching porous silicon (PSi) which allow PSi devices to be more easily integrated with other devices used for controlling or utilizing the output of the PSi devices. The output from energetic PSi devices may be used for MEMS actuation or energy harvesting applications. Initial proof-of-concept energy harvesting with a macro-scale, piezo cantilever has been demonstrated. Of the 2 etch processes developed, the sacrificial electrode process is the simplest, but it produces an inhomogeneous PSi thickness across the wafer and introduces surface topography due to electropolishing. By using the anchored electrode method, which incorporates a dielectric layer, more controllable etch depths and patterned devices are obtained. However, a proximity effect is observed where features closer to the electrode etch more rapidly. A simple voltage divider model can be used to predict these relative etch depths, but more work is required to develop a quantitative model.