Influence of plasma volume discharge in atmospheric- pressure air on the admittance of MIS structures based on MBE p-HgCdTe

12th International Conference on Gas Discharge Plasmas and Their Applications

Voitsekhovskii, A.V.^1 ; Nesmelov, S.N.^1 ; Dzyadukh, S.M.^1 ; Grigoriev, D.V.^1,2 ; Tarasenko, V.F.^2 ; Shulepov, M.A.^2

National Research Tomsk State University, Lenin Avenue, 36, Tomsk

634050, Russia^1

Institute of High Current Electronics SB RAS, 2/3 Akademichesky Avenue, Tomsk

634055, Russia^2

关键词: Atmospheric pressure air;    Electrical field;    Fixed Charges;    Impurity defects;    Insulator films;    Main parameters;    MIS structure;    Nanometer thickness;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/652/1/012003/pdf
DOI  :  10.1088/1742-6596/652/1/012003

来源: IOP

【 摘 要 】

This article investigates the effect of a nanosecond plasma volume discharge, which is formed in an inhomogeneous electrical field at atmospheric pressure, on the electrical properties of MIS structures based on HgCdTe (MCT) epitaxial films. The MIS structure based on films exposed to the discharge significantly changed its main parameters. The most notable feature of the structure exposed to discharge is the significant increase in the positive fixed charge in the insulator. A possible reason for changes in the characteristics of MIS structure after exposure to discharge is the significant change in the impurity-defect system of the semiconductor near the interface. This is accompanied with a formation of an insulator film of nanometer thickness on the surface, which gives rise to positive fixed charge.