Non-Markovian Effects in the Spin Transfer Dynamics in Diluted Magnetic Semiconductors due to Excitation in Proximity to the Band Edge

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Cygorek, M.^1 ; Axt, V.M.^1

Theoretische Physik III, Universität Bayreuth, Bayreuth

95440, Germany^1

关键词: Band edge;    Differential transform method;    Excited electrons;    Finite memory;    Non-Markovian effects;    Quantum kinetic;    Single electron;    Spin-transfer dynamics;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012042/pdf
DOI  :  10.1088/1742-6596/647/1/012042

来源: IOP

【 摘 要 】

The non-Markovian effects in the spin dynamics in diluted magnetic semiconductors found in quantum kinetic calculations can be reproduced very well by a much simpler effective single electron theory, if a finite memory is accounted for. The resulting integro-differential equation can be solved by a differential transform method, yielding the Taylor series of the solution. From the comparison of both theories it can be concluded that the non-Markovian effects are due to the spectral proximity of the excited electrons to the band edge.