InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Coquillat, D.^1 ; Nodjiadjim, V.^2 ; Konczykowska, A.^2 ; Dyakonova, N.^1 ; Consejo, C.^1 ; Ruffenach, S.^1 ; Teppe, F.^1 ; Riet, M.^2 ; Muraviev, A.^3 ; Gutin, A.^3 ; Shur, M.^3 ; Godin, J.^2 ; Knap, W.^1

Laboratoire Charles Coulomb (L2C), UMR 5221, CNRS-Université de Montpellier, Montpellier, France^1

III-V Lab (Bell Labs, TRT and CEA/LETI Joint Lab), Route de Nozay, Marcoussis

91460, France^2

Rensselaer Polytechnic Institute, Troy

NY

12180, United States^3

关键词: Broadband terahertz;    InP double heterojunction bipolar transistors;    Non-invasive testing;    Terahertz detectors;    Terahertz radiation;    Transmission mode;    Voltage responsivity;    Wide frequency range;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012036/pdf
DOI  :  10.1088/1742-6596/647/1/012036

来源: IOP

【 摘 要 】

This paper presents terahertz detectors based on high performance 0.7-μm InP double heterojunction bipolar transistor (DHBT) technology and reports on the analysis of their voltage responsivity over a wide frequency range of the incoming terahertz radiation. The detectors operated without any spatial antennas to couple terahertz radiation to the device and have been characterized in the 0.25 - 3.1 THz range with the responsivities (normalized to 1 W radiant power) of 5 V/W and 200 μV/W measured at 0.35 THz and 3.11 THz, respectively. The InP DHBTs also performed as the imaging single-pixels at room temperature in the raster scanned transmission mode. A set of the sub-terahertz images of plant leaves suggest potential utility of InP DHBT detectors for terahertz imaging dedicated to non-invasive testing of plants.