Energy Relaxation and Non-linear Transport in InAs Nanowires

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Hathwar, R.^1 ; Saraniti, M.^1 ; Goodnick, S.M.^1

Center for Computational Nanoscience, Arizona State University, United States^1

关键词: Electron energies;    Energy relaxation;    Energy relaxation time;    Fermi's Golden Rule;    Full band Monte Carlo simulation;    Full band structures;    High electric fields;    Tight binding methods;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012029/pdf
DOI  :  10.1088/1742-6596/647/1/012029

来源: IOP

【 摘 要 】

Using a full band Monte Carlo simulation the electron energy relaxation times of InAs nanowires along the [100] direction are shown to be greater than the energy relaxation time of bulk InAs. The full band structure and scattering rates of the nanowires are calculated using the sp3d5s∗ tight binding method and Fermi's Golden rule respectively. At moderately high electric fields, a runaway effect is also observed in the nanowires and is attributed to the 1D nature of the scattering rates.