Coupled electron and thermal transport simulation of self-heating effects in junctionless MOSFET

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Mohamed, M.^1 ; Aksamija, Z.^2 ; Ravaioli, U.^1,3

Beckman Institute, University of Illinois, Urbana

IL

61801, United States^1

Electrical and Computer Engineering Department, University of Massachusetts, Amherst

MA

01003, United States^2

Department of Electrical and Computer Engineering, University of Illinois, Urbana

IL

61801, United States^3

关键词: Consistent algorithm;    Gate-all-around;    Gate-all-around MOSFET;    Nanowire mosfet;    Quantum correction;    Self-heating effect;    Thermal transport;    Three-phonon process;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012026/pdf
DOI  :  10.1088/1742-6596/647/1/012026

来源: IOP

【 摘 要 】

This paper explores self-heating effects on junctionless gate-all-around nanowire MOSFET using self-consistently coupled 3D full band electro-thermal transport. The self-consistent algorithm begins by supplying the heat generation data from the 3D electron Monte Carlo with 2D quantum correction to the phonon Monte Carlo. Subsequently, the phonon Monte Carlo transports the phonons introduced from the electron simulation and considers their scattering through the anharmonic three-phonon processes. The anharmonic three-phonon decay and the use of full dispersion facilitate a detailed description of heat transfer and the determination of the temperature map. We compare the performance of gate-all-around junctionless against the conventional inversion mode gate-all-around MOSFET. Our results indicate that junctionless MOSFET has less self-heating effects than the conventional inversion mode device, particularly at the limits of high currents.