Electron and hole in-plane g-factors in single InAs quantum rings

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Kaji, R.^1 ; Tominaga, T.^1 ; Wu, Y.-N.^2 ; Cheng, S.-J.^2 ; Adachi, S.^1

Department of Applied Physics, Hokkaido University, Sapporo, Japan^1

Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan^2

关键词: Electron g-factor;    InAs/GaAs quantum rings;    Magnetophotoluminescence;    Model calculations;    Out-of-plane anisotropy;    Shape anisotropy;    Transverse magnetic field;    Valence band mixing;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012011/pdf
DOI  :  10.1088/1742-6596/647/1/012011

来源: IOP

【 摘 要 】

The electron and hole in-plane g-factors were studied in individual InAs/GaAs quantum rings (QRs). From the magneto-photoluminescence measurements under a transverse magnetic field, we evaluated the in-plane g-factors of electron and hole spins by rotating the sample systematically along the crystal growth axis. The experimental results indicate that the in-plane and the out-of-plane anisotropies in hole g-factor are larger than those of electron g-factor, and the value of the hole in-plane g-factor varies largely from QR to QR while the electron g-factor is almost a constant value. From the model calculation considering the effects of shape anisotropies and uniaxial stress, we examined the correlation between the in-plane g-factors and the degree of valence band mixing. Further, the experimentally obtained trend in g-factors was in agreement qualitatively with theoretical consideration.