Graphene-InSe-graphene van der Waals heterostructures

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Svatek, S.A.^1 ; Mudd, G.W.^1 ; Kudrynskyi, Z.R.^1 ; Makarovsky, O.^1 ; Kovalyuk, Z.D.^2 ; Mellor, C.J.^1 ; Eaves, L.^1 ; Beton, P.H.^1 ; Patanè, A.^1

School of Physics and Astronomy, University of Nottingham, Nottingham

NG7 2RD, United Kingdom^1

Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi

58001, Ukraine^2

关键词: Band line up;    Broad bands;    Electron transit time;    InSe thin films;    Photoresponses;    Semiclassical model;    Van der waals;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012001/pdf
DOI  :  10.1088/1742-6596/647/1/012001

来源: IOP

【 摘 要 】

We exploit the broad-band transparency of graphene and the favorable energy band line-up of graphene with n-type InSe thin films to create graphene-InSe-graphene heterostructures with high photosensitivity at room temperature. We use a semiclassical model to describe the photoresponse and its dependence on the electron transit time through the InSe layer.