Achieving 50 nm lateral-resolution quantitative EDX SEM

Electron Microscopy and Analysis Group Conference 2015

Pimentel, G.^1 ; Lozano-Perez, S.^1

Department of Materials, University of Oxford, Oxford

OX1 3PH, United Kingdom^1

关键词: Chemical mapping;    Complex oxides;    Energy dispersive x-ray;    High-lateral resolution;    Lateral resolution;    Low voltage scanning electron microscopies;    Nm resolution;    Quantitative methodology;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/644/1/012016/pdf
DOI  :  10.1088/1742-6596/644/1/012016

来源: IOP

【 摘 要 】

Low Voltage Scanning Electron Microscopy (LV-SEM) has become a very promising approach to perform Energy Dispersive X-ray (EDX) chemical mapping with high- lateral resolution [1]. Using voltages as low as 1.5keV, sub-10nm resolutions can be achieved. In this work, we try to take advantage of the small interaction volume in order to simplify the otherwise more complex SEM quantitative methodology. This way, phenomena such as absorption and fluorescence can be ignored and, effectively treat the quantification as with the Transmission Electron Microscopy (TEM)-based Cliff-Lorimer method. Experimental k- factors have been obtained from a series of standards and used to quantify complex oxide phases in steels.