Electrophysical properties of phase change memory materials on the pseudo-binary line GeTe-Sb2Te3

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Yakubov, A.O.^1 ; Terekhov, D.Y.^1 ; Sherchenkov, A.A.^1 ; Kozyuhhin, S.A.^2 ; Lazarenko, P.I.^1 ; Babich, A.V.^1 ; Timoshenkov, S.P.^1 ; Gromov, D.G.^1 ; Shuliatyev, A.S.^1

Moscow State Institute of Electronic Technology, Technical University, Zelenograd

124498, Russia^1

Kurnakov Institute of General and Inorganic Chemistry, RAS, Moscow

119991, Russia^2

关键词: Amorphous thin films;    Delocalized state;    Electrophysical properties;    Localized state;    Pseudo-binaries;    Temperature dependence;    Transport of charge;    Two channel;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012104/pdf
DOI  :  10.1088/1742-6596/643/1/012104

来源: IOP

【 摘 要 】

The temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films on the basis of GeSb4Te7, GeSb2Te4, and Ge2Sb2Te5perspective for the phase change memory application were investigated. It was revealed that two-channel conduction mechanism with the transport of charge carriers by the localized states in the valence band tail and delocalized states of the valence band is characteristic feature of these materials.