Reaction-diffusion optoelectronics based on dispersed semiconductors

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Gradov, O.V.^1 ; Gradova, M.A.^2

Institute for Energy Problems of Chemical Physics, Russian Academy of Sciences, Leninsky pr., 38/2, Moscow, Russia^1

Semenov Institute of Chemical Physics, Russian Academy of Sciences, Kosygin Str., 4, Moscow, Russia^2

关键词: Dissipative structure;    Flux gradients;    Image capturing;    Light energy conversion;    Luminescent property;    Morphological properties;    Photo-catalytic;    Reaction diffusion;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012072/pdf
DOI  :  10.1088/1742-6596/643/1/012072

来源: IOP

【 摘 要 】

Since many dispersed semiconductors are capable of light energy conversion and possess photocatalytic and luminescent properties, and any discreet light-sensitive medium can be applied for the positional-sensitive light flux registration (similar to pixels and voxels in semiconductor-based image recording), the use of chemically active dispersed semiconductors allows to perform a direct signal / image registration based on light-sensitive reaction-diffusion redox systems without conventional CCD / CMOS devices. The image capturing in this case will correspond to the formation of the metastable dissipative structures in the active medium, with their morphological properties determined by the flux gradient and provided by the corresponding dispersed semiconductor medium sensitivity.