IR spectra of ICPCVD SiNx thin films for MEMS structures

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Rudakov, G.^1 ; Reshetnikov, I.^2

SMC Technological Centre, Zelenograd, Moscow, Russia^1

National Research University of Electronic Technology (MIET), Zelenograd, Moscow, Russia^2

关键词: Interference modulation;    MEMS-structure;    Microelectromechanical system (MEMS);    Non-stoichiometric;    Reflection spectra;    Selective absorption;    Thermo sensitive;    Thin metal layers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012063/pdf
DOI  :  10.1088/1742-6596/643/1/012063

来源: IOP

【 摘 要 】

Optical properties of non-stoichiometric silicon nitride (SiNx) films for thermo sensitive membranes of microelectromechanical systems (MEMS) and microoptomechanical systems (MOMS) has been studied applying infrared (IR) spectroscopy. For the structures SiNx/Si and (thin metal layer)/SiNx/Si transmission and reflection spectra in the region of wave numbers of 500-7000 cm-1has been investigated. For the investigated structures analysis of optical properties observed in the IR spectra both in the form of selective absorption bands and interference modulation of a baseline was conducted.