Mode switching in InN microresonators

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Kazanov, D.R.^1 ; Kaibyshev, V.H.^1 ; Davydov, V.U.^1 ; Smirnov, A.N.^1 ; Jmerik, V.N.^1 ; Kyznetsova, N.V.^1 ; Ivanov, S.V.^1 ; Shubina, T.V.^1

Ioffe Physical-Technical Institute of the RAS, St.-Petersburg

194021, Russia^1

关键词: Absorption edges;    Low order;    Micro resonators;    Mode-switching;    Optical parameter;    Patterned substrates;    Refraction index;    Temperature rise;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012061/pdf
DOI  :  10.1088/1742-6596/643/1/012061

来源: IOP

【 摘 要 】

InN optical resonators, which can support whispering-gallery modes of low orders up to room temperature, were made by MBE on patterned substrates. The observed effect of mode switching with a temperature rise was ascribed to the change of optical parameters induced by the shift of an absorption edge and modification of its shape. The results of modelling taking into account variation of refraction index reproduce typical distribution of the intensity of electromagnetic field within the resonators.