Microdisk lasers based on GaInNAsSb/GaAsN quantum well active region

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Moiseev, E.I.^1 ; Kryzhanovskaya, N.V.^1 ; Kudashova, Yu.V.^1 ; Maximov, M.V.^1 ; Kulagina, M.M.^3 ; Troshkov, S.I.^3 ; Lipovskii, A.A.^1,2 ; Korpijärvi, V.-M.^4 ; Karjalainen, H.^4 ; Niemi, T.^4 ; Guina, M.^4 ; Zhukov, A.E.^1

St. Petersburg Academic University, St. Petersburg

194021, Russia^1

Peter the Great St.Petersburg Polytechnic University, St. Petersburg

195251, Russia^2

Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg

194021, Russia^3

Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland^4

关键词: Active regions;    GaInNAsSb;    Microdisk laser;    Microdisks;    Room temperature lasing;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012040/pdf
DOI  :  10.1088/1742-6596/643/1/012040

来源: IOP

【 摘 要 】

Microdisk lasers based on novel InGaAsNSb/GaAsN quantum well active region are developed and studied under optical pumping. Room temperature lasing at 1.55 μm in 2.3 μm in diameter microdisks with InGaAsNSb/GaAsN QW is demonstrated.