Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

29th International Conference on Photonic, Electronic, and Atomic Collisions

Takabayashi, Y.^1 ; Bagrov, V.G.^2 ; Bogdanov, O.V.^3 ; Pivovarov, Yu L.^3 ; Tukhfatullin, T.A.^3

SAGA Light Source, 8-7 Yayoigaoka, Tosu, Saga

841-0005, Japan^1

National Research Tomsk State University, Tomsk

634050, Russia^2

National Research Tomsk Polytechnic University, Tomsk

634050, Russia^3

关键词: Electron angular distribution;    Half wavelength;    Half-wave;    Radiation spectra;    Relativistic electron;    Silicon crystal;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/635/6/062007/pdf
DOI  :  10.1088/1742-6596/635/6/062007

来源: IOP

【 摘 要 】

The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.