X-ray spectroscopy of multicharged xenon ions at the EBIT plasma

29th International Conference on Photonic, Electronic, and Atomic Collisions

Banas, D.^1 ; Jabloski, L.^1 ; Jagodziski, P.^2 ; Kubala-Kukus, A.^1 ; Sobota, D.^1 ; Puchala, M.^1 ; Pajek, M.^1

Institute of Physics, Jan Kochanowski University, Kielce

25-406, Poland^1

Department of Physics, University of Technology, Kielce

25-314, Poland^2

关键词: Atomic process;    Crystal diffraction;    Electron beam ion source;    Electron beam ion traps;    Electron energies;    High resolution;    Low resolution;    Silicon Drift Detector;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/635/5/052092/pdf
DOI  :  10.1088/1742-6596/635/5/052092

来源: IOP

【 摘 要 】

X-ray spectra of multicharged xenon ions created in an electron-beam ion trap (EBIT) were measured both with a low-resolution silicon drift detector (SDD) and a high-resolution Johann/Johannson type crystal diffraction spectrometer. The measurement were performed in the electron-beam ion source (EBIS) using the transmission, leaky and pulsed modes of the ion source operation with trapped xenon ions excited by an electron beams of energies 9-15 keV. Moreover, the dynamics and equilibration of the EBIT plasma was studied by measuring the X-ray spectra for different electron energies and trapping times. The results will be discussed using available theoretical models describing the atomic processes in the EBIT plasma.