Near-Threshold Dielectronic Recombination Studies of Si-Like Ions

29th International Conference on Photonic, Electronic, and Atomic Collisions

Kaur, J.^1 ; Gorczyca, T.W.^1 ; Badnell, N.R.^2

Department of Physics, Western Michigan University, Kalamazoo

MI

49008-5252, United States^1

Department of Physics, University of Strathclyde, Glasgow

G4 0NG, United Kingdom^2

关键词: Dielectronic recombinations;    Isoelectronic sequence;    Near thresholds;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/635/5/052074/pdf
DOI  :  10.1088/1742-6596/635/5/052074

来源: IOP

【 摘 要 】

Dielectronic recombination rate coefficients are computed for the Si-like isoelectronic sequence, focusing on the near-threshold resonances of S2+.